![]() ![]() In the above image the equivalent circuit of IGBT is shown. Although, BJT is current controlled device but for the IGBT, the control depends on the MOSFET, thus it is voltage controlled device, equivalent to the standard MOSFETs. IGBT is a voltage controlled semiconductor which enables large collector emitter currents with almost zero gate current drive.Īs discussed, IGBT has the advantages of both MOSFET and BJTs, IGBT has insulated gate same as like typical MOSFETs and same output transfer characteristics. ![]() MOSFET has advantages of high switching speed with high impedance and on the other side BJT has advantage of high gain and low saturation voltage, both are present in IGBT transistor. It’s is a semiconductor device used for switching related applications.Īs IGBT is a combination of MOSFET and Transistor, it has advantages of the both transistors and MOSFET. ![]() IGBT is a short form of Insulated Gate Bipolar Transistor, combination of Bipolar Junction Transistor (BJT) and Metal oxide Field effect transistor (MOS-FET). ![]()
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